The Origin of Excellent Gate-Bias Stress Stability in Organic Field-Effect Transistors Employing Fluorinated-Polymer Gate Dielectrics 페이지 정보 작성자 최고관리자 작성일 25-02-24 16:19 본문 Author J. Kim,+ J. Jang,+ K. Kim, H. Kim, S. H. Kim, and C. E. Park Journal Adv. Mater. Vol 26, 7241-7246 (2014) 관련링크 https://advanced.onlinelibrary.wiley.com/doi/full/10.1002/adma.2014023… 목록 이전글Composition-Matched Molecular “Solders” for Semiconductors 다음글Temperature-Dependent Hall and Field-Effect Mobility in Strongly Coupled All-Inorganic Nanocrystal Arrays